| 摘要 |
<p>A high-density memory array for low-power application is provided to read easily a phase change memory cell by using a body effect of an associated MOS selection transistor. A MOS selection transistor(104) has a gate connected to a word line, and source and drain regions each connected between first and second bit lines. A first phase change material element is connected between the first bit line and the source region of the MOS selection transistor. A second phase change material element is connected between the drain region and the second bit line. A sense circuit is adapted to ascertain a state of the first phase change material element by determining a threshold voltage condition of the MOS selection transistor.</p> |
