METHODS FOR PROGRAMMING A FLOATING BODY NONVOLATILE MEMORY

摘要

A technique to speed up the programming of a non-volatile memory device (71) that has a floating body (78) actively removes holes from the floating body (78) that have accumulated after performing hot carrier injection (HCI). The steps of HCI and active hole removal can be alternated until the programming is complete. The active hole removal is faster than passively allowing holes to be removed, which can take milliseconds. The active hole removal can be achieved by reducing the drain voltage (V_D) to a negative voltage and reducing the gate voltage (V_G) as well. This results in directly withdrawing the holes from the floating body (78) to the drain (76). Alternatively, reducing the drain voltage (V_D) while maintaining current flow stops impact ionization while sub channel current collects the holes. Further alternatively, applying a negative gate voltage (V_G) causes electrons generated by band to band tunneling and impact ionization near the drain (76) to recombine with holes.