| 摘要 |
<p>A positive resist composition and a pattern forming method using the same are provided to satisfy all of high sensitivity, line width roughness and excellent defocus latitude on line pitch. A resist composition comprises (A) a resin containing a repeating unit represented by formula(I); and (B) a compound capable of generating an acid by irradiating actinic rays or radiation, wherein AR represents an aryl group; Rn represents an alkyl group, a cycloalkyl group or an aryl group; and A represents an atom or group selected from the group consisting of a hydrogen atom, an alkyl group, a halogen atom, a cyano group and an alkyloxycarbonyl group. In the resist composition, the resin (A) further contains a repeating unit represented by formula (A1). Alternatively, the resist composition comprises (A) a resin containing a repeating unit represented by formula (I') and a repeating unit represented by formula (A1'); and (B) a compound capable of generating an acid by irradiating with actinic rays or radiation.</p> |
