| 摘要 |
<p>A semiconductor device and a fabricating method thereof are provided to manufacture an MISFET(Metal Insulator Semiconductor FET) is operated at high speed by reducing an interfacial resistance at both n-type MISFET and p-type MISFET and to minimize the MISFET without complex of manufacturing. First source and drain regions are formed on a p-type semiconductor substrate in which each of the first source and drain regions has an n-type diffusion layer, a silicide layer formed on the n-type diffusion layer, and a layer containing at least one second metal element selected from a group consisting of scandium and lanthanum. A first gate insulating layer(5) is formed between the first source and drain regions on the substrate, and a first gate electrode(6) is formed on the first gate insulating layer.</p> |
