| 摘要 |
<p>A method for manufacturing a flash memory device is provided to prevent the attack against a semiconductor substrate portion adjacent to an isolation layer by reducing remarkably an etched amount of an edge portion of the isolation layer in a gate etch process using a sidewall conductive layer formed at both sides of a conductive layer for floating gates. A trench is formed on a semiconductor substrate(20) with a tunnel oxide layer(21) and a conductive layer(22) for floating gates. An isolation layer(23) is formed in the trench. Both sides of the conductive layer for floating gates are exposed to the outside by etching partially the isolation layer. A sidewall conductive layer(24a) is formed at both sides of the conductive layer for floating gates. A dielectric film(25) and a conductive layer(26) for control gates are sequentially formed on the resultant structure.</p> |
