THIN FILM TRANSISTOR PANEL AND METHOD OF MANUFACTURING FOR THE SAME

摘要

A TFT(Thin Film Transistor) panel and a manufacturing method thereof are provided to include a first protection layer composed of nitrogen or a nitrogenous compound, thereby preventing the deterioration of the performance of a TFT due to aluminum diffusion by preventing aluminum or aluminum alloy of source and drain electrodes from being diffused to the semiconductor layer of the TFT. A TFT(Thin Film Transistor) panel comprises the followings: a board(110); a gate line(129) which is formed on the board and includes a gate electrode, and is composed of a single layer; a gate dielectric layer(140) which is formed on the gate electrode; a semiconductor layer(161a) which is formed on the gate dielectric layer; a first protection layer(161b) which is formed on the semiconductor layer and includes nitrogen or a nitrogenous compound; a data line(179) and a drain electrode which are formed on the first protection layer and include a source electrode, and are composed of a single layer; and a pixel electrode which is electrically connected with the drain electrode.