发明名称 |
Dual-gate, non-volatile memory cells, arrays thereof, methods of manufacturing the same and methods of operating the same |
摘要 |
Memory cells which include a semiconductor substrate having a source region and a drain region separated by a channel region; a charge-trapping structure disposed above the channel region of the semiconductor substrate; a first gate disposed above the charge-trapping structure and proximate to the source region; and a second gate disposed above the charge-trapping structure and proximate to the drain region; where the first gate and the second gate are separated by a first nanospace are provided, along with arrays including a plurality of such cells, methods of manufacturing such cells and methods of operating such cells.
|
申请公布号 |
US2007201276(A1) |
申请公布日期 |
2007.08.30 |
申请号 |
US20060352788 |
申请日期 |
2006.02.13 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
HO CHIAHUA;LUE HANG-TING;SHIH YEN-HAO;LAI ERH-KUN;HSIEH KUANG Y. |
分类号 |
G11C16/04;G11C11/34;H01L21/336;H01L29/788 |
主分类号 |
G11C16/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|