摘要 |
<p>Disclosed is a composition for forming an insulating film, which is capable of reducing spaces between molecules, thereby forming a dense insulating film. Also disclosed are an insulating film and an organic semiconductor device which can be driven at a low voltage while having a stable driving voltage by using such an insulating film. Specifically disclosed is a composition for forming an insulating film between a gate electrode layer and an organic semiconductor film layer in an organic semiconductor device, which composition contains a resin component (A) having a silsesquioxane backbone. The resin component (A) is composed of a resin (A1) having a structural unit (a1) represented by the general formula (a-1) below. (a-1) (In the formula, X represents an alkylene group having 1-15 carbon atoms or a divalent aromatic hydrocarbon group having 6-15 carbon atoms; R<SUP>1</SUP> represents a hydrogen atom, an alkyl group having 1-15 carbon atoms or an alkoxyalkyl group having 2-15 carbon atoms; R<SUP>2</SUP> represents an alkyl group having 1-4 carbon atoms; and n represents 0 or 1.)</p> |
申请人 |
TOKYO OHKA KOGYO CO., LTD.;OSAKA UNIVERSITY;OGATA, TOSHIYUKI;KAWANA, DAISUKE;HADA, HIDEO;TAKAHASHI, MOTOKI;OHMORI, YUTAKA;KAJII, HIROTAKE |
发明人 |
OGATA, TOSHIYUKI;KAWANA, DAISUKE;HADA, HIDEO;TAKAHASHI, MOTOKI;OHMORI, YUTAKA;KAJII, HIROTAKE |