发明名称 METHOD FOR MANUFACTURING ORGANIC SEMICONDUCTOR DEVICE AND COMPOSITION FOR FORMING INSULATING FILM USED THEREIN
摘要 <p>Disclosed is a composition for forming an insulating film, which is capable of reducing spaces between molecules, thereby forming a dense insulating film. Also disclosed are an insulating film and an organic semiconductor device which can be driven at a low voltage while having a stable driving voltage by using such an insulating film. Specifically disclosed is a composition for forming an insulating film between a gate electrode layer and an organic semiconductor film layer in an organic semiconductor device, which composition contains a resin component (A) having a silsesquioxane backbone. The resin component (A) is composed of a resin (A1) having a structural unit (a1) represented by the general formula (a-1) below. (a-1) (In the formula, X represents an alkylene group having 1-15 carbon atoms or a divalent aromatic hydrocarbon group having 6-15 carbon atoms; R&lt;SUP&gt;1&lt;/SUP&gt; represents a hydrogen atom, an alkyl group having 1-15 carbon atoms or an alkoxyalkyl group having 2-15 carbon atoms; R&lt;SUP&gt;2&lt;/SUP&gt; represents an alkyl group having 1-4 carbon atoms; and n represents 0 or 1.)</p>
申请公布号 WO2007097212(A1) 申请公布日期 2007.08.30
申请号 WO2007JP52345 申请日期 2007.02.09
申请人 TOKYO OHKA KOGYO CO., LTD.;OSAKA UNIVERSITY;OGATA, TOSHIYUKI;KAWANA, DAISUKE;HADA, HIDEO;TAKAHASHI, MOTOKI;OHMORI, YUTAKA;KAJII, HIROTAKE 发明人 OGATA, TOSHIYUKI;KAWANA, DAISUKE;HADA, HIDEO;TAKAHASHI, MOTOKI;OHMORI, YUTAKA;KAJII, HIROTAKE
分类号 H01L29/786;C08G77/14;C09D5/25;C09D183/04;H01B3/00;H01B3/46;H01L21/312;H01L51/05;H01L51/30 主分类号 H01L29/786
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