发明名称 CONNECTION STRUCTURE AND ITS FABRICATION PROCESS
摘要 <P>PROBLEM TO BE SOLVED: To connect Si and Al positively with low cost. <P>SOLUTION: In the connection structure 1 of an Si electrode (Si material) 40 and an Al wire (Al material) 20, a first part 2, a plurality of second parts 4 and a plurality of second parts 14 are interposed between the Si electrode 40 and the Al wire 20, and each of the first part 2, the second parts 4 and the second parts 14 are in contact with both the Si electrode 40 and the Al wire 20. At the first part 2, an Si oxide layer 13 and an Al oxide layer 23 exist wherein the Si oxide layer 13 is in contact with the Si electrode 40 and the Al oxide layer 23 is interposed between the Si oxide layer 13 and the Al wire 20. At the second part 4, Al exists and at the second part 14, an Si portion 14a and an Al portion 14b exist. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007220822(A) 申请公布日期 2007.08.30
申请号 JP20060038443 申请日期 2006.02.15
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 NANO MASANORI;FUJIMOTO HIROAKI;MIZUTANI ATSUHITO;FUJITANI NAOKI;FUKUDA TOSHIYUKI
分类号 H01L21/60;H01L21/607 主分类号 H01L21/60
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