发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a charge-pump circuit that can achieve a desired step-up operation, even if a high-side switch for pre-charging or a low-side switch for output driving is structured with a low breakdown voltage transistor. SOLUTION: In response to a clock signal CLK, the high level of a drive input signal V<SB>DHS</SB>, that drives the high-side switch Q11 for pre-charging and the low-side switch Q14 for output driving, is set to a step-up output voltage Vout. The low level of the drive input signal V<SB>DHS</SB>is set not to the level of ground potential Vss (GND), but to an input voltage Vdd. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007221890(A) 申请公布日期 2007.08.30
申请号 JP20060038210 申请日期 2006.02.15
申请人 RENESAS TECHNOLOGY CORP 发明人 SOHARA YASUYUKI;TANAKA MASAYASU;OKAZAKI YASUHIRO
分类号 H02M3/07 主分类号 H02M3/07
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