| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a gate with nitride film sidewalls, which forms vertically the shoulder portion of a stopper nitride film and makes it possible to reduce recession of the nitride film by a contact hole etching. SOLUTION: In the method of forming the gate with nitride film sidewalls for forming a contact by a self-alignment process, a gate material 31 is formed on a silicon substrate 30 before forming the gate. A thick offset nitride film 32 is formed on the gate material 31 in consideration of the reduction of the film in CMP processing. Then, the gate with offset nitride films is formed, by gate-etching the gate material 31. After a stopper nitride film is formed on the gate with offset nitride films, a nitride film sidewall 33 is formed by sidewall etching, and an insulating film 34 is deposited on it, then, the CMP processing is performed. After forming the gate with the vertical stopper nitride film, an interlayer insulating film 36 is formed, further, a resist is applied, and a resist pattern 37 for forming the contact hole is formed. COPYRIGHT: (C)2007,JPO&INPIT
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