| 摘要 |
PROBLEM TO BE SOLVED: To realize a semiconductor device with a highly reliable interconnection structure by restraining generation of resist poisoning due to a reaction blocking material of a chemical amplification type resist. SOLUTION: The method of manufacturing a semiconductor device has a step of depositing a first insulating film 21 on a substrate, a step of forming a first interconnection 22 by burying a conductive material in a formed groove after the groove is formed in the first insulating film 21, a step of forming a second insulating film 23 on the first insulating film 21, a step of casting ultraviolet rays in heating state to the second insulating film 23, a step of forming a third insulating film 25 on the second insulating film 23, and a step of forming a resist pattern 31 on the third insulating film 25. COPYRIGHT: (C)2007,JPO&INPIT
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