| 摘要 |
PROBLEM TO BE SOLVED: To improve embeddability of an insulating film into a removal region by making proper a removal amount of the region suffering from damage that causes the dielectric constant of the insulating film to be raised, and further improve wiring reliability by reducing the dielectric constant of the insulating film between wirings. SOLUTION: A manufacturing method of a semiconductor device comprises: a process of forming a sacrifice film 12 etched selectively with respect to a first insulating film 11 after the first insulating film 11 is formed on a substrate, a process of forming a recess (a first wiring groove 13) in the first sacrifice film 12 and the first insulating film 11, a process of forming a conductor (first wiring 16) in the first wiring groove 13 via a barrier film 14, a process of selectively etching the sacrifice film 12 with respect to the first insulating film 11 and removing the same, and a process of forming a second insulating film 18 on the first insulating film 11 so as to bury a removal region 17 of the sacrifice film. COPYRIGHT: (C)2007,JPO&INPIT
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