| 摘要 |
PROBLEM TO BE SOLVED: To provide a normally-off nitride semiconduictor device which can obtain a sufficient current density. SOLUTION: On the substrate 601, an AlN buffer layer 602, an undope GaN layer 603, an undope AlGaN layer 604, a first p-type AlGaN layer 605, a second p-type AlGaN layer 607, and a high density p-type GaN layer 608 are formed sequentially; and a gate electrode 611 carries out ohmic contact with the high density p-type GaN layer 608. On the undope AlGaN layer 604, a source electrode 609 and a drain electrode 610 are prepared. A pn junction is formed in the gate electrode region generated by two dimensional electron gas generated in the interface between the undope AlGaN layer 604 and the undope GaN layer 603, and by the first p-type AlGaN layer 605 and the second p-type AlGaN layer 607. Moreover, the second p-type AlGaN layer 607 covers a part of an SiN film 606. COPYRIGHT: (C)2007,JPO&INPIT
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