METHOD FOR FORMING FINE PATTERN OF SEMICONDUCTOR DEVICE

摘要

A method for forming a fine pattern of a semiconductor device include forming a stack structure including a 1^st layer hard mask film to a n^th layer hard mask film (n is an integer ranging from 2 or more) over an underlying layer formed over a semiconductor substrate. The n^th layer hard mask film, the top layer, is selectively etched to obtain a first hard mask pattern of the n^th layer. A second hard mask pattern of the n^th layer is formed between the first hard mask patterns of the n^th layer. A (n-1)^th layer hard mask film is etched using the first and the second hard mask pattern of the n^th layer as etching masks. The (c) step to the (d) step repeat to form the first and the second hard mask patterns of the 1^st layer over the underlying layer. And, the underlying layer is etched using the first and second hard mask patterns of the 1^st layer as etching masks.