发明名称 |
HIGH CAPACITY LOW COST MULTI-STATE MAGNETIC MEMORY |
摘要 |
One embodiment of the present invention includes a multi-state current-switching magnetic memory element having a stack of magnetic tunneling junction (MTJ) separated by a non-magnetic layer for storing more than one bit of information, wherein different levels of current applied to the memory element cause switching to different states.
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申请公布号 |
US2007201265(A1) |
申请公布日期 |
2007.08.30 |
申请号 |
US20070678515 |
申请日期 |
2007.02.23 |
申请人 |
RANJAN RAJIV YADAV;ASSAR MAHMUD;KESHTBOD PARVIZ |
发明人 |
RANJAN RAJIV YADAV;ASSAR MAHMUD;KESHTBOD PARVIZ |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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