| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element having an ODR (Omni-Directional-Reflector) structure having superior sticking power for an insulating layer of a reflective metal layer, and to provide its manufacturing method. <P>SOLUTION: In the semiconductor light emitting element, a first metal layer 14 made of metal (for example, Al) has stronger sticking power for the insulating layer 15 (for example, SiO<SB>2</SB>) than a second metal layer 13, and is easy to alloy with the second metal layer 13 (for example, Au) at low temperature. The layer 14 is interposed between the insulating layer 15 on the reverse surface of a semiconductor layer 25 and a reflective layer (second metal layer 13), and an alloy region 27 is formed on the interface between the second metal layer 13 and first metal layer 14. Since the first metal layer 14 is interposed between the second metal layer 13 and insulating layer 15, the sticking strength of the second metal layer 13 for the insulating layer 15 increases. Because of the presence of the alloy region 27, a function of the second metal layer 13 as the reflective layer is prevented from substantially being impeded owing to the formation of the first metal layer 14 between the insulating layer 15 and second metal layer 13. <P>COPYRIGHT: (C)2007,JPO&INPIT |
