| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high-efficiency light emitting device which is much improved in light extraction efficiency, and to provide its manufacturing method which is capable of manufacturing the light emitting device industrially and inexpensively. <P>SOLUTION: The surface-emission semiconductor light emitting device is equipped with a semiconductor multilayer film, an n-electrode, and a p-electrode. The n-electrode and/or the p-electrode is a transparent electrode, and the transparent electrode is located at a light extraction surface side and formed of a transparent conductive oxide. A semiconductor layer kept in contact with the transparent electrode is an n-type semiconductor layer whose n-type impurity concentration is 5×10<SP>18</SP>cm<SP>-3</SP>to 5×10<SP>20</SP>cm<SP>-3</SP>, and projections of the semiconductor light emitting device nearly the same in shape and size are provided, at least, on a part of the surface of the region of the semiconductor multilayer film. <P>COPYRIGHT: (C)2007,JPO&INPIT |
