METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element on which an InGaN layer can be normally grown in a crystal.

SOLUTION: The method for manufacturing a semiconductor light emitting element includes a process in which a substrate 1 is mounted in a crystal growth chamber 2, and a raw material gas containing an NH3gas is supplied from a gas supplying means 3 to the crystal growth chamber 2. Then an InGaN layer is grown on the substrate 1 in a crystal. The concentration of H2O in the raw material gas is lower than 0.1 ppm using an FTIR4 which can measure the concentration of H2O in the NH3gas.

COPYRIGHT: (C)2007,JPO&INPIT