| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which deterioration in quality can be reduced, and to provide a bonding system and a process for manufacturing a semiconductor device. <P>SOLUTION: The semiconductor device 100 comprises a semiconductor substrate 10 and a COF tape 120. The semiconductor substrate 10 is bonded to the COF tape 120. The semiconductor substrate 10 has a first surface 10a which faces the COF tape 120. The COF tape 120 has a PI film 121 and a first adhesive layer 128. The PI film 121 is bonded to the semiconductor substrate 10 through the first adhesive layer 128. The distance between the first surface 10a of the semiconductor substrate 10 and the COF tape 120 is different in a region 10a close to the area center AC1 of the first surface 10a and a region close to the end 10b of the first surface 10a. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
