发明名称 |
Silicon carbide semiconductor device having junction field effect transistor and method for manufacturing the same |
摘要 |
A silicon carbide semiconductor device includes a substrate and a junction field effect transistor. The transistor includes: a first semiconductor layer disposed on the substrate; a first gate layer disposed on a surface of the first semiconductor layer; a first channel layer adjacent to the first gate layer on the substrate; a first source layer connecting to the first channel layer electrically; a second gate layer adjacent to the first channel layer to sandwich the first channel layer; a second channel layer adjacent to the second gate layer to sandwich the second gate layer; a third gate layer adjacent to the second channel layer to sandwich the second channel layer; and a second source layer connecting to the second channel layer electrically.
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申请公布号 |
US2007200117(A1) |
申请公布日期 |
2007.08.30 |
申请号 |
US20070785276 |
申请日期 |
2007.04.17 |
申请人 |
DENSO CORPORATION |
发明人 |
KUMAR RAJESH;MIHAILA ANDREI;UDREA FLORIN |
分类号 |
H01L29/80;H01L31/0312;H01L21/04;H01L21/337;H01L29/24;H01L29/808 |
主分类号 |
H01L29/80 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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