发明名称 |
Etching solution for etching layer system, comprising phosphoric acid, nitric acid, de-ionized water and halogen component, which releases halogen ions that contain these components |
摘要 |
<p>An etching solution comprises an aluminum layer (1), a copper layer (2) and a layer selected from a nickel-vanadium layer (3), nickel and alloys of nickel, which are arranged between an aluminum layer and a copper layer. The solution contains phosphoric acid, nitric acid, de-ionized water and a halogen component, which releases halogen ions containing these components. The metal cation salts are selected, which are contained in the layer system. Independent claims are also included for the following: (1) the structuring of a layer system involves selecting layers from aluminum, copper, nickel vanadium, nickel and their alloys; and (2) an Under Bump Metallization stack.</p> |
申请公布号 |
DE102006008261(A1) |
申请公布日期 |
2007.08.30 |
申请号 |
DE20061008261 |
申请日期 |
2006.02.22 |
申请人 |
FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V. |
发明人 |
DIETZ, FRANK;KOHLMANN-VON PLATEN, KLAUS;QUENZER, HANS JOACHIM |
分类号 |
H01L21/3213;H01L21/60 |
主分类号 |
H01L21/3213 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|