发明名称 Etching solution for etching layer system, comprising phosphoric acid, nitric acid, de-ionized water and halogen component, which releases halogen ions that contain these components
摘要 <p>An etching solution comprises an aluminum layer (1), a copper layer (2) and a layer selected from a nickel-vanadium layer (3), nickel and alloys of nickel, which are arranged between an aluminum layer and a copper layer. The solution contains phosphoric acid, nitric acid, de-ionized water and a halogen component, which releases halogen ions containing these components. The metal cation salts are selected, which are contained in the layer system. Independent claims are also included for the following: (1) the structuring of a layer system involves selecting layers from aluminum, copper, nickel vanadium, nickel and their alloys; and (2) an Under Bump Metallization stack.</p>
申请公布号 DE102006008261(A1) 申请公布日期 2007.08.30
申请号 DE20061008261 申请日期 2006.02.22
申请人 FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V. 发明人 DIETZ, FRANK;KOHLMANN-VON PLATEN, KLAUS;QUENZER, HANS JOACHIM
分类号 H01L21/3213;H01L21/60 主分类号 H01L21/3213
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