| 摘要 |
An etching method for forming anisotropic features for high aspect ratio applications is provided to control easily the profiles and CDs(Critical Dimensions) of the features through a sidewall passivation managing member. A substrate is loaded in an etching chamber, wherein the substrate has a predetermined layer structure(202). The predetermined layer structure is etched through an opening portion of a mask layer in order to define a first portion of a feature by using a first gas compound(204). A re-deposition layer is formed while a second etching process is performed on the resultant structure by using a second gas compound. The opening portion is removed from the resultant structure by performing an in-situ etching process on the re-deposition layer. The predetermined layer is etched through the opening removed portion.
|
