METHOD FOR REMOVING REMAINING OXIDE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

摘要

A residual oxide layer removing method and a method for manufacturing a semiconductor device using the same are provided to remove easily a remaining oxide layer by measuring exactly the thickness of the remaining oxide layer on a substrate using a detection sensor composed of a light emitting portion and a light receiving portion. A detection sensor(180) is arranged over a substrate(100). The detection sensor is composed of a light emitting portion and a light receiving portion. A first oxide layer is formed on the substrate. A second oxide layer with a predetermined thickness is formed on the resultant structure by performing a first etching process on the first oxide layer. At this time, the thickness of the second oxide layer remaining on the substrate is exactly measure in real time by using a time difference between a light irradiation of the light emitting portion and a light reception of the light receiving portion.