| 摘要 |
To provide a low-cost, easy-to-use, and efficient method for manufacturing a semiconductor device, which eliminates the need for the formation or removal of barrier metals upon formation of bumps, and a high-performance semiconductor device with fine bumps arranged at a narrow pitch. The method includes: forming a plurality of electrode pads 12 on one surface of a semiconductor substrate 10; forming insulating layers (e.g., inorganic insulating layer 14 and organic insulating layer 16) to cover the perimeter of each electrode pad 12; selectively forming a mask layer 20 on the insulating layers 14 and 16; cleaning the surface of the electrode pads 12 which is not covered with the insulating layers 14 and 16; forming external terminals 46 in regions defined by the insulating layers 14 and 16 and mask layer 20 so that they are in contact with the electrode pads 12; and removing the mask layer 20. |
