METHOD FOR FORMING GATE OF SEMICONDUCTOR DEVICE BY POLYMER

摘要

A method for forming a gate of a semiconductor device by using a polymer is provided to reduce a manufacturing cost by forming the gate of the semiconductor device less than resolution of a photolithography process without performing a photolithography process of high resolution. A first insulating layer is formed on an upper surface of a silicon substrate(11). A first photoresist pattern is performed on the first insulating layer. A polymer is formed around the first photoresist pattern to form an opening for exposing the first insulating layer in a predetermined width. The first insulating layer is etched by using the polymer as a mask. The first photoresist pattern and the polymer are removed. A second insulating layer(16) and a polysilicon layer(17) are sequentially formed on the substrate. The first insulating layer is exposed by polishing and planarizing the polysilicon layer and the second insulating layer. The first insulating layer is removed from the substrate.