METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE HAVING A THREE DIMESIONAL STRUCTURE AND SEMICONDUCTOR DEVICES FABRICATED THEREBY

摘要

A method for fabricating a semiconductor device with a 3-D structure is provided to prevent deterioration of a low discrete device even in a high-temperature treatment by transferring the heat of the high-temperature treatment to a semiconductor substrate through a thermal conductive plug. A lower discrete device is formed in a first semiconductor substrate(11). The lower discrete device and the first semiconductor substrate are covered with an insulation layer(13). A thermal conductive plug comes in contact with the first semiconductor substrate, penetrating the insulation layer(15). Impurity ions are implanted into a second semiconductor substrate to form a damage layer that defines a surface layer and a bulk layer of the second semiconductor substrate(17). The insulation layer and the thermal conductive plug are bonded to the surface layer(21). The bulk layer is delaminated from the bonded surface layer to expose the surface layer(23). The exposed surface layer is cured to form a single crystalline semiconductor layer. The lower discrete device can includes a bulk transistor formed by using the first semiconductor substrate as a body layer.