Halbleiteraufbau mit vergrabenem Inselgebiet und Konaktgebiet

摘要

Semiconductor device has a semiconductor region (2) of one conductivity provided with a buried island region (3) of the opposite conductivity, having a contact region (5) of the first conductivity type at the surface (80 ) of the island region which is separated from the surface (20) of the semiconductor region via a lateral channel region (22), forming part of the current path to or from the contact region. The current (I) is controlled within this current path via at least one depletion zone (23,24) having a lateral edge extending as far as the contact region.