| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a gallium-nitride-based compound semiconductor light emitting element superior in light extraction efficiency, and its manufacturing method. <P>SOLUTION: An n-type semiconductor layer 13, a light emitting layer 14, and a p-type semiconductor layer 15 which comprise a gallium-nitride-based compound semiconductor are laminated in this order on a substrate 11, and a translucent positive terminal 16 is laminated on the p-type semiconductor layer 15. Further, a positive terminal bonding pad 17 is provided to the translucent positive terminal 16, and a negative terminal bonding pad 18 is provided on the n-type semiconductor layer 13, in this light emitting element. A deregulated uneven surface is formed on at least a part of a surface 15a of the p-type semiconductor layer 15. <P>COPYRIGHT: (C)2007,JPO&INPIT |
