| 摘要 |
PROBLEM TO BE SOLVED: To improve the data transfer rate of a semiconductor memory. SOLUTION: A refresh control circuit generates a refresh request in a predetermined cycle. A first burst control circuit outputs a predetermined number of strobe signals in accordance with an access command. A burst access operation is executed by an access command. A data input/output circuit successively inputs data to be transferred to a memory cell array or successively outputs data supplied from the memory cell array, in synchronization with the strobe signals. An arbitration circuit determines which of a refresh operation or a burst access operation is to be executed first, when the refresh request and the access command conflict with each other. Therefore, the refresh operation and the burst access operation can be sequentially executed without being overlapped. As a result, read data can be output at a high speed, and write data can be input at a high speed. That is, the data transfer rate can be improved. COPYRIGHT: (C)2007,JPO&INPIT
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