WAFER-LEVEL SEALED MICRODEVICE HAVING TRENCH ISOLATION AND METHODS FOR MAKING THE SAME

摘要

A microdevice (20) having a hermetically sealed cavity (22) to house a microstructure (26). The microdevice (20) comprises a substrate (30), a cap (40), an isolation layer (70), at least one conductive island (60), and an isolation trench (50). The substrate (30) has a top side (32) with a plurality of conductive traces (36) formed thereon. The conductive traces (36) provide electrical connection to the microstructure (26). The cap (40) has a base portion (42) and a sidewall (44). The sidewall (44) extends outwardly from the base portion (42) to define a recess (46) in the cap (40). The isolation layer (70) is attached between the sidewall (44) of the cap (40) and the plurality of conductive traces (36). The conductive island (60) is attached to at least one of the plurality of conductive traces (36). The isolation trench (50) is positioned between the cap (40) and the conductive island (60) and may be unfilled or at least partially filled with an electrically isolating material. There is also a method of making the same microdevice.