| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor capable of controlling a shape during etching passivation and gate insulation films; and preventing a conductive layer from stepped-cutting to improve its quality, a liquid crystal display, and their manufacturing methods. SOLUTION: The thin film transistor includes a gate layer 2, a gate insulation film 3, a semiconductor layer 4, a drain layer 5, and a passivation layer 60 provided on an insulation substrate 1. The conductive layer 7 provided on the passivation layer 60 is connected through a contact hole with the gate layer 2 or the drain layer 5. The passivation layer 60 is formed of two or more layers including a high speed etching rate layer 62 on the front side and a low speed etching rate layer 61 on the substrate side, and the thickness of the layer 62 is made to be equal to or thinner than the thickness of the conductive layer 7. COPYRIGHT: (C)2007,JPO&INPIT |
