Vertical semiconductor device e.g. diode, has semiconductor zone arranged in semiconductor region in which doping concentration is increased, where thickness of zone lies in specific range

摘要

Device has a semiconductor zone (27) that is arranged in a semiconductor region (23) in which the doping concentration is increased relative to the base doping concentration of the semiconductor region. The maximum value of the doping concentration lies in the region greater than a specific value. The thickness of the semiconductor zone lies in the range of less than 3 micrometer.