| 摘要 |
<P>PROBLEM TO BE SOLVED: To flexibly cope with access to a memory on the assumption of different erasure block size. <P>SOLUTION: A memory card 1 has a controller 4 and a NAND type flash memory 3. The controller 4 includes a ROM 9 which stores a program for managing association between a first address in a semiconductor memory having the first erasure block size and a second address in a semiconductor memory having second erasure block size larger than the first erasure block size and a CPU 8 which executes the program stored in the ROM 9. The NAND type flash memory 3 has the second erasure block size. The controller 4 executes access to the NAND type flash memory 3 using the second address. <P>COPYRIGHT: (C)2007,JPO&INPIT |
