METHODS OF MANUFACTURING SEMICONDUCTOR DEVICE, ELECTROOPTICAL DEVICE AND ELECTRONIC APPARATUS, AS WELL AS SEMICONDUCTOR DEVICE, ELECTROOPTICAL DEVICE AND ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To conduct forming so as to allow a channel length between the source-drain electrodes of a transistor to be short and uniform with the use of a simple method. SOLUTION: The source-drain electrodes 103 are formed on a glass substrate 101 with a front-end insulating film 102 formed on the surface. A coating film 104 is formed by coating an impurity-containing liquid silicon material between the source-drain electrodes. The coating film 104 is irradiated with a laser beam so as to remove a part of the film 104, and separated into a first coating film 106 and a second coating film 107. The first and second coating films 106, 107 are calcined to be n-type silicon films. A semiconductor film 110 is formed between the first n-type silicon film 108 and the second n-type silicon film 109. Then a gate insulating film 111 and a gate electrode 113 are successively formed on the semiconductor film 110. COPYRIGHT: (C)2007,JPO&INPIT