发明名称 Production method of semiconductor device
摘要 Provided is a method of producing a semiconductor device having an organic semiconductor layer, which includes the steps of providing a crystallization promoting layer on a substrate; providing an organic semiconductor precursor on the crystallization promoting layer; and applying light energy and thermal energy simultaneously to the organic semiconductor precursor to form a layer containing an organic semiconductor. Thereby, an organic semiconductor device is provided which is low cost and has excellent durability.
申请公布号 US2007085072(A1) 申请公布日期 2007.04.19
申请号 US20060513062 申请日期 2006.08.31
申请人 CANON KABUSHIKI KAISHA 发明人 MASUMOTO AKANE;GO SHINTETSU;NAKAYAMA TOMONARI;OHNISHI TOSHINOBU
分类号 H01L29/08 主分类号 H01L29/08
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