发明名称 PRODUCTION OF SELF-ORGANIZED PIN-TYPE NANOSTRUCTURES, AND THE RATHER EXTENSIVE APPLICATIONS THEREOF
摘要 The invention relates to methods and devices comprising a nanostructure (2; 4, 4a) for improving the optical behavior of components and apparatuses and/or improving the behavior of sensors by increasing the active surface area. The nanostructure (2) is produced by means of a special RIE etching process, can be modified regarding the composition of the materials thereof, and can be provided with adequate coatings. The amount of material used for the base layer (3) can be reduced by supplying a buffer layer (406). Many applications are disclosed.
申请公布号 WO2007042521(A2) 申请公布日期 2007.04.19
申请号 WO2006EP67249 申请日期 2006.10.10
申请人 X-FAB SEMICONDUCTOR FOUNDRIES AG;GAEBLER, DANIEL;BACH, KONRAD 发明人 GAEBLER, DANIEL;BACH, KONRAD
分类号 H01L31/18;H01L21/3065;H01L31/0216;H01L31/0236 主分类号 H01L31/18
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