发明名称 PROCESS FOR MODIFYING DIELECTRIC MATERIALS
摘要 The invention relates to a process for modifying materials including, e.g., dielectric materials associated with electronic substrates, semiconductor chips, wafers, and the like, damaged by fabrication processes such as plasma etch processing. The described method improves structural integrity as measured, e.g., by Young's Modulus, as well as hydrophobicity, as measured, e.g., by contact angles at the liquid/surface interface.
申请公布号 WO2007024714(A3) 申请公布日期 2007.04.19
申请号 WO2006US32395 申请日期 2006.08.18
申请人 BATTELLE MEMORIAL INSTITUTE;CARMAN, APRIL, J.;ZEMANIAN, THOMAS, S.;FRYXELL, GLEN, E.;GASPAR, DANIEL, J. 发明人 CARMAN, APRIL, J.;ZEMANIAN, THOMAS, S.;FRYXELL, GLEN, E.;GASPAR, DANIEL, J.
分类号 H01L21/3105 主分类号 H01L21/3105
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