PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD AND TRAY

摘要

A tray (15) of a dry etching apparatus (1) is provided with substrate storing holes (19A-19D) penetrating in the thickness direction, and a substrate supporting section (21) for supporting an outer circumference portion of a lower plane (2a) of a substrate (2). A dielectric board (23) is provided with a tray supporting plane (28) for supporting a lower plane of the tray (15) and substrate placing sections (29A-29D), which are inserted into the substrate storing holes (19A-19D) from the lower plane side of the tray (15) and have the substrate (2) placed on a substrate placing plane (31), i.e., upper end planes of the substrate placing sections. A direct current voltage applying mechanism (43) applies a direct current voltage to an electrostatically attracting electrode (40). A heat transfer gas supplying mechanism (45) supplies a heat transfer gas between the substrate (2) and the substrate placing plane (31). The substrate (2) can be held on the substrate placing plane (31) with high adhesiveness. As a result, cooling efficiency of the substrate (2) is improved and uniform processing over the entire region on a substrate surface including regions close to the outer circumference end is performed.