WAFER LEVEL PACKAGE USING SILICON VIA CONTACTS FOR CMOS IMAGE SENSOR AND METHOD OF FABRICATING THE SAME

摘要

The present invention relates to a wafer level package of a CMOS image sensor using silicon via contacts and a method of manufacturing the same. A wafer level package of a CMOS image sensor includes: a wafer where image sensor elements including a plurality of electrode pads are formed; a transparent substrate attached to a front side of the wafer; a via hole formed from a back side of the wafer to underneath of a plurality of electrode pads of the front side; a passivation layer formed on a remaining portion except the underneath of the electrode pads in the via hole and whole back side of the wafer; a via contact formed in the via hole; and a solder bump formed on the via contact of the back side of the wafer.