| 摘要 |
A nitride light emitting diode is provided to prevent effectively the overflow of electrons and holes by forming a potential barrier made of an InxAlyGazN layer at a predetermined portion between an active layer and a doped GaN layer. A nitride light emitting diode includes an N-GaN layer(11), an InxAlyGazN(0<x<=1, 0<=y<=1, 0<=z<1) layer, an active layer and a P-GaN layer. The InxAlyGazN layer is formed on the N-GaN layer. The active layer is formed on InxAlyGazN layer. The P-GaN layer(14) is formed on the active layer. The InxAlyGazN layer is used as a potential barrier. A portion of the N-GaN layer is performed with a mesa etching process.
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