发明名称 IMPROVING CRITICAL DENSITY IN Nb3Sn SUPERCONDUCTING WIRE
摘要 Critical current densities of internal tin wire to the range of 3000 A/mm<SUP>2</SUP> at temperature of 4.2 K and in magnetic field 12 T are achieved by controlling the following parameters in a distributed barrier subelement design: wt% Sn in bronze; atomic Nb:Sn; local area ratio; reactable barrier; barrier thickness relative to the filament thickness; additions of a dopant such as Ti or Ta to the Nb<SUB>3</SUB>Sn; and the design for restacking and wire reduction to control the maximum filament diameter at the subsequent heat reaction stage.
申请公布号 WO2006038909(A3) 申请公布日期 2006.12.21
申请号 WO2005US05368 申请日期 2005.02.22
申请人 OXFORD SUPERCONDUCTING TECHNOLOGY;FIELD, MICHAEL;PARRELL, JEFF;ZHANG, YOUZHU;HONG, SEUNGOK 发明人 FIELD, MICHAEL;PARRELL, JEFF;ZHANG, YOUZHU;HONG, SEUNGOK
分类号 B05D5/12;H01L39/24 主分类号 B05D5/12
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