| 摘要 |
A method of manufacturing a semiconductor device having a through electrode, includes forming through holes 36 in a substrate 31 , forming a first metal layer 39 from one surface side of the substrate and pasting a protection film 40 on one surface of the substrate, forming through electrodes by filling the through holes with a second metal by means of an electroplating of the second metal 42 applied from other surface of the substrate while using the first metal layer as a power feeding layer, removing the protection film 40 , and removing the first metal layer 39 located in areas other than peripheral portions of the through electrodes. |
