发明名称 |
LOW VOLTAGE THIN FILM TRANSISTOR WITH HIGH-K DIELECTRIC MATERIAL |
摘要 |
A thin film transistor (TFT) includes a source electrode, a drain electrode, and a gate electrode. A gate insulator is coupled to the source electrode, drain electrode, and gate electrode. The gate insulator includes room temperature deposited high-K materials so as to allow said thin film transistor to operate at low operating voltage. |
申请公布号 |
WO2006105077(A3) |
申请公布日期 |
2006.12.21 |
申请号 |
WO2006US11263 |
申请日期 |
2006.03.28 |
申请人 |
MASSACHUSETTS INSTITUTE OF TECHNOLOGY;KIM, IL-DOO;TULLER, HARRY, L. |
发明人 |
KIM, IL-DOO;TULLER, HARRY, L. |
分类号 |
H01L51/05;H01L21/316 |
主分类号 |
H01L51/05 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|