THIN FILM MEASURING APPARATUS, THIN FILM MEASURING METHOD AND THIN FILM MANUFACTURING METHOD

摘要

A thin film measuring apparatus by which a minute current flowing in a measuring sample such as a semiconductor substrate is measured by probe irradiation of electron beams or the like and characteristics of a thin film such as a seed layer can be detected without destroying the sample. A thin film measuring method and a thin film manufacturing method are also provided. The thin film measuring apparatus is provided with a means for measuring a substrate current generated in the measuring sample when the measuring sample is irradiated with electron probe beams or the like. The thin film measuring apparatus is characterized in that the apparatus is provided with a means for measuring the characteristics of the thin film based on the substrate current in a status prior to forming the thin film on the measuring sample and the substrate current in a status after forming the thin film on the measuring sample.