| 摘要 |
<p>The invention relates to a method for plasma processing a semiconductor substrate in a process chamber connected to a vacuum line via a valve, comprising, in an alternating manner, at least one etching step and at least passivation step, characterized in that it comprises the following operations: (a) a reference pressure P<SUB>ref</SUB> is defined at which one would like to carry out the processing; (b) the position of the valve is fixed during the first etching step; (c) the pressure inside the process chamber is permitted to stabilize during n cycles; (d) the pressure inside the process chamber is measured during the etching step during m cycles with m being equal to at least 2, and a mean pressure value P<SUB>c</SUB> is calculated from the conducted measurements; (e) after n + m cycles, the position of the valve is adjusted in order to obtain a pressure inside the process chamber that comes closer to the reference pressure value P<SUB>ref</SUB>; (f) steps (c) to (e) are repeated until the calculated mean pressure P<SUB>c</SUB> is essentially equal to the reference pressure value P<SUB>ref</SUB> whereby making it no longer necessary to adjust the position of the valve.</p> |
