| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can prevent the increase of the contact resistance of an upper electrode and an electric conductive film formed on it, when the surface of an exposed upper electrode is cleaned up. SOLUTION: A ferroelectric capacitor is constituted on a substrate by laminating a lower electrode, a capacitor ferroelectric film, and an upper electrode one by one. The upper electrode is formed of a conductive oxide. The capacitor has such an oxygen concentration distribution by which the oxygen concentration in the upper layer becomes relatively low in comparison with the oxygen concentration in the lower layer of the upper electrode. An interlayer insulating film covers the ferroelectric capacitor. A via hole penetrates the interlayer insulating film and reaches a position deeper than the upper surface of the upper electrode. This via hole stops at a position where the oxygen concentration of the upper electrode is shallower than a position which becomes the maximum. In the bottom of the via hole, a conductive material is brought into contact with the upper electrode. COPYRIGHT: (C)2007,JPO&INPIT
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