ETCHANT, AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE INCLUDING CONDUCTIVE WIRING USING ETCHANT AND RESULTANT STRUCTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To provide an etchant for silver (Ag) wiring, a method for forming the silver (Ag) wiring using the etchant, and a method for manufacturing a thin film transistor substrate using the etchant. SOLUTION: The etchant contains a substance expressed by a chemical formula: M(OH)XLY, ammonium acetate and ultra-demineralized water. In the formula: M is Zn, Sn, Cr, Al, Ba, Fe, Ti, Si, or B; X is 2 or 3; L is H2O, NH3, CN, COR, or NH2R; Y is 0, 1, 2, or 3; and R is an alkyl group. COPYRIGHT: (C)2007,JPO&INPIT