MIM/MIS structure with praseodymium titanate or praseodymium oxide as insulator material

摘要

Disclosed is an electronic device with a layer succession of the metal-insulator-metal (MIM) or metal-insulator-semiconductor (MIS) kind. The insulator layer contains or consists of praseodymium titanate. A metal layer or both metal layers contain titanium nitride (TiN), tantalum nitride (TaN) or ruthenium oxide (RuO₂) or consist of one of those materials. MIM capacitors for mixed signal and HF applications comprising titanium nitride electrodes and an SiO₂/Pr₂Ti₂O₇ layer stack as the dielectric exhibit a high capacitance density of 8 fF/mum² at the very low VCC of -40 ppm/V². The guaranteed operating voltage extrapolated to 10 years is 6 V.