发明名称 |
LOW TEMPERATURE SYNTHESIS OF HEXAGONAL ZNS NANOCRYSTALS AS WELL AS DERIVATIVES WITH DIFFERENT TRANSITION METAL DOPANTS USING THE SAID METHOD |
摘要 |
<p>A method to fabricate semiconductor nanocrystals which comprises dissolving a metal source in a first solvent that contains at least one functional -OH group to form a mixture and heating the mixture to form a solution 1 and dissolving a X source in a second solvent which contains at least one functional -OH group, to form a solution 2 and mixing solution 2 and then combining solution 2 into solution 1, and heating and separating the solution out, to produce semiconductor nanocrystals.</p> |
申请公布号 |
WO2006135399(A2) |
申请公布日期 |
2006.12.21 |
申请号 |
WO2005US30041 |
申请日期 |
2005.08.24 |
申请人 |
UNIVERSITY OF DELAWARE;XIAO, JOHN, Q.;ZHAO, YUWEN |
发明人 |
XIAO, JOHN, Q.;ZHAO, YUWEN |
分类号 |
H01L51/40 |
主分类号 |
H01L51/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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